“SAMSUNG 990 PRO 1 TB NVMe SSD W Heatsink – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW” has been added to your basket. View basket

Samsung

SAMSUNG 980 EVO 500GB M.2 NVME SSD

R1,453.43

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SAMSUNG 980 500GB NVME SSD – READ SPEED UP TO 3100MB/S, WRITE SPEED TO UP 2600MB/S, RANDOM READ UP TO 400000 IOPS, RANDOM WRITE UP TO 470000 IOPS, PCIE 3.0 X4, NVME 1.4, V-NAND 3BIT MLC, PABLO CONTROLLER, HMB (HOST MEMORY BUFFER) 5 YEAR CARRY-IN WARRANTY OR 300 TBW FEATURES: UPGRADE TO BREATHTAKING NVME SPEED PACKED WITH SPEED. KEEP MOVING WITH FULL POWER MODE

SKU: MZ-V8V500BW Category: Samsung

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SAMSUNG 980 EVO 500GB M.2 NVME SSD

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SAMSUNG 990 PRO 2 TB NVME SSD – READ SPEED UP TO 7450 MB S WRITE SPEED TO UP 6900 MB S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS PCIE 4.0 X4 NVME 2.0 V-NAND 3BIT MLC IN-HOUSE CONTROLLER 2GB LOW POWER DDR4 1200TBW

SAMSUNG 990 PRO 2 TB NVME SSD – READ SPEED UP TO 7450 MB S WRITE SPEED TO UP 6900 MB S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS PCIE 4.0 X4 NVME 2.0 V-NAND 3BIT MLC IN-HOUSE CONTROLLER 2GB LOW POWER DDR4 1200TBW

SAMSUNG 990 PRO 2 TB NVMe SSD W Heatsink – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1400000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 2GB Low Power DDR4 1200TBW

SAMSUNG 990 PRO 2 TB NVMe SSD W Heatsink – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1400000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 2GB Low Power DDR4 1200TBW

SAMSUNG 990 PRO 1 TB NVMe SSD – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 1 TB NVMe SSD – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

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SAMSUNG 980 EVO 500GB M.2 NVME SSD

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SAMSUNG 990 PRO 2 TB NVME SSD – READ SPEED UP TO 7450 MB S WRITE SPEED TO UP 6900 MB S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS PCIE 4.0 X4 NVME 2.0 V-NAND 3BIT MLC IN-HOUSE CONTROLLER 2GB LOW POWER DDR4 1200TBW

SAMSUNG 990 PRO 2 TB NVME SSD – READ SPEED UP TO 7450 MB S WRITE SPEED TO UP 6900 MB S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS PCIE 4.0 X4 NVME 2.0 V-NAND 3BIT MLC IN-HOUSE CONTROLLER 2GB LOW POWER DDR4 1200TBW

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SAMSUNG 990 PRO 2 TB NVMe SSD W Heatsink – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1400000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 2GB Low Power DDR4 1200TBW

SAMSUNG 990 PRO 1 TB NVMe SSD – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 1 TB NVMe SSD – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

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Acer

AMD

AMX

Antec

AOC

Aorus

APC

Apple

ASRock

Asus