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SAMSUNG 870 EVO 2TB SATA SSD

Name: SAMSUNG 870 EVO 2TB SATA SSD - Buy computer equipment online
SKU: MZ-77E2T0BW
Price: 4232.74 ZAR
Availability: OutOfStock

Samsung 870 EVO, 2000 GB, 2.5″, 560 MB/s, 6 Gbit/s

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SAMSUNG 870 EVO 2TB SATA SSD, READ SPEED UP TO 560 MB/S, WRITE SPEED UP TO 530 MB/S, RANDOM READ MAX 98000 IOPS, MKX CONTROLLER, 1200 TBW, 2GB LPDDR 4, V-NAND 5 YEARS CARRY-IN WARRANTY OR 600 TBW FEATURES: THE WORLD’S FAVORITE SSD EXCELLENCE IN PERFORMANCE INDUSTRY-DEFINING RELIABILITY 1.5 MILLION HOURS (MTBF)

SKU: MZ-77E2T0BW Category: Samsung

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SAMSUNG 870 EVO 2TB SATA SSD

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SAMSUNG 990 PRO 1 TB NVMe SSD – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 1 TB NVMe SSD W Heatsink – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 1 TB NVMe SSD W Heatsink – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 4 TB NVME SSD – W HEATSINK READ SPEED UP TO 7450 MB S WRITE SPEED TO UP 6900 MB S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS PCIE 4.0 X4 NVME 2.0 V-NAND 3BIT MLC IN-HOUSE CONTROLLER 2GB LOW POWER DDR4 1200TBW

SAMSUNG 990 PRO 4 TB NVME SSD – W HEATSINK READ SPEED UP TO 7450 MB S WRITE SPEED TO UP 6900 MB S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS PCIE 4.0 X4 NVME 2.0 V-NAND 3BIT MLC IN-HOUSE CONTROLLER 2GB LOW POWER DDR4 1200TBW

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SAMSUNG 870 EVO 2TB SATA SSD

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SAMSUNG 990 PRO 1 TB NVMe SSD – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 1 TB NVMe SSD – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 1 TB NVMe SSD W Heatsink – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 1 TB NVMe SSD W Heatsink – Read Speed up to 7450 MB s Write Speed to up 6900 MB s Random Read up to 1200000 IOPS Random Write up to 1550000 IOPS PCIe 4.0 x4 NVMe 2.0 V-Nand 3bit MLC In-house controller 1GB Low Power DDR4 600TBW

SAMSUNG 990 PRO 4 TB NVME SSD – W HEATSINK READ SPEED UP TO 7450 MB S WRITE SPEED TO UP 6900 MB S RANDOM READ UP TO 1400000 IOPS RANDOM WRITE UP TO 1550000 IOPS PCIE 4.0 X4 NVME 2.0 V-NAND 3BIT MLC IN-HOUSE CONTROLLER 2GB LOW POWER DDR4 1200TBW

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Acer

AMD

AMX

Antec

AOC

Aorus

APC

Apple

ASRock

Asus